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dc.contributor.authorChen, Chih-Yangen_US
dc.contributor.authorWang, Shen-Deen_US
dc.contributor.authorShieh, Ming-Shanen_US
dc.contributor.authorChen, Wei-Chengen_US
dc.contributor.authorLin, Hsiao-Yien_US
dc.contributor.authorYeh, Kuan-Linen_US
dc.contributor.authorLee, Jam-Wenen_US
dc.contributor.authorLei, Tan-Fuen_US
dc.date.accessioned2014-12-08T15:25:06Z-
dc.date.available2014-12-08T15:25:06Z-
dc.date.issued2006en_US
dc.identifier.isbn0-7803-9498-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/17481-
dc.identifier.urihttp://dx.doi.org/10.1109/RELPHY.2006.251338en_US
dc.description.abstractWe investigated the impact of plasma process on the devices' performance and reliability degradation of low temperature poly-Si thin film transistors (LTPS TFTs). LTPS TFTs with different antenna areas were used to study the effects of the plasma etching process on the devices. The larger TFT antenna area, the more performance instability occurs. The reliability of LTPS TFTs with large antenna areas was found to be degraded from gate bias stress and hot carrier stress.en_US
dc.language.isoen_USen_US
dc.titleProcess induced instability and reliability issues in low temperature poly-Si thin film transistorsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/RELPHY.2006.251338en_US
dc.identifier.journal2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUALen_US
dc.citation.spage713en_US
dc.citation.epage714en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000240855800153-
Appears in Collections:Conferences Paper


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