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dc.contributor.authorLai, Chun-Fengen_US
dc.contributor.authorChi, Jim-Yongen_US
dc.contributor.authorChao, Chia-Hsinen_US
dc.contributor.authorLee, Chia-Enen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorHuang, Chen-Yangen_US
dc.contributor.authorYeh, Wen-Yungen_US
dc.contributor.authorLu, Tien-Changen_US
dc.date.accessioned2014-12-08T15:25:07Z-
dc.date.available2014-12-08T15:25:07Z-
dc.date.issued2009en_US
dc.identifier.isbn978-1-4244-5184-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/17505-
dc.description.abstractExperimental investigation of A-type and B-type guided modes was performed in GaN-based film-transferred photonic crystal light-emitting diodes. Good agreement with the band structure calculated in the limit of two-dimensional free photon was obtained. (C)2009 Optical Society of Americaen_US
dc.language.isoen_USen_US
dc.titleGaN-based film-transferred light-emitting diodes with photonic crystalen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2009 CONFERENCE ON LASERS AND ELECTRO-OPTICS AND QUANTUM ELECTRONICS AND LASER SCIENCE CONFERENCE (CLEO/QELS 2009), VOLS 1-5en_US
dc.citation.spage622en_US
dc.citation.epage623en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000274751300313-
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