RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Wang, Sheng-Chun	en_US
dc.contributor.author	Su, Pin	en_US
dc.contributor.author	Chen, Kun-Ming	en_US
dc.contributor.author	Lin, Chien-Ting	en_US
dc.contributor.author	Liang, Victor	en_US
dc.contributor.author	Huang, Guo-Wei	en_US
dc.date.accessioned	2014-12-08T15:25:08Z	-
dc.date.available	2014-12-08T15:25:08Z	-
dc.date.issued	2006	en_US
dc.identifier.isbn	1-4244-0181-X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17510	-
dc.language.iso	en_US	en_US
dc.title	RF extrinsic resistance extraction considering neutral-body effect for partially-depleted SOI MOSFETs	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2006 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Proceedings of Technical Papers	en_US
dc.citation.spage	139	en_US
dc.citation.epage	140	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000239791300055	-
顯示於類別：	會議論文