標題: CO2 laser annealing synthesis of silicon nanocrystals buried in Si-rich SiO2
作者: Lin, CJ
Chueh, YL
Chou, LJ
Kuo, HC
Lin, GR
光電工程學系
Department of Photonics
公開日期: 2005
摘要: Localized synthesis of 3-8 nm Si nanocrystals (nc-Si) in PECVD-grown Si-rich SiO2 (SRSO) film is demonstrated using CO2 laser annealing at an intensity below the ablation-threshold (6.0 kW/cm(2)). At an optimized surface temperature of 1285 degrees C, the precipitated nc-Si in CO2-laser-annealed SRSO film results in near-infrared photoluminescence (PL) at 806 ran, whereas the ablation damage induced at higher laser intensities as well as temperatures results in blue PL at 410 nm related to structural defects. The refractive index of the laser-annealed SRSO at 633 nm increases from 1.57 to 2.31 as the laser intensity increases from 1.5 to 6.0 kW/cm(2). Transmission electron microscopy analysis reveals that the average size and volume density of Si nanocrystals embedded in the SRSO film are about 6 nm and 4.5 x 10(16) cm(-3), respectively. The CO2 laser annealing with controlled intensity and spot size can potentially accomplish in-situ, localized annealing of the SRSO film without causing irreversible damage to nearby electronics.
URI: http://hdl.handle.net/11536/17535
ISBN: 1-55899-815-2
ISSN: 0272-9172
期刊: Amorphous and Nanocrystalline Silicon Science and Technology-2005
Volume: 862
起始頁: 325
結束頁: 330
Appears in Collections:Conferences Paper