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dc.contributor.authorChou, Cheng-Weien_US
dc.contributor.authorWu, Yung-Chunen_US
dc.contributor.authorWu, Yuan-Chunen_US
dc.contributor.authorChang, Ting-Changen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorLou, Jen-Chungen_US
dc.contributor.authorHuang, Wen-Junen_US
dc.contributor.authorChang, Chun-Yenen_US
dc.contributor.authorSze, Simon M.en_US
dc.date.accessioned2014-12-08T15:25:11Z-
dc.date.available2014-12-08T15:25:11Z-
dc.date.issued2005en_US
dc.identifier.isbn978-957-28522-2-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/17568-
dc.description.abstractA pattern-dependent metal-induced lateral crystallized (PDMILC) poly-Si thin film transistor was successfully demonstrated and characterized. The fabrication of new PDMILC is simple with only four-mask process. After NH3 plasma passivation, the device performance was enhanced, including the high on/off current ration (>10(6)), the high mobilit (31.19 cm(2)/Vs), and the steep subtreshold swing (0.483 V/dec). The performance of PDMLC TFT with NH3 plasma passivation is superior to that of the counterpart without NH3 plasma passivation. The NH3 plasma treatment can result in the effective hydrogen passivation of the grain-boundary dangling bonds, and the nitrogen piile-up at SiO2/poly-Si interface.en_US
dc.language.isoen_USen_US
dc.titleFabrication of pattern-depended metal induced lateral crystallization polysilicon thin film transistors with NH3 plasma passivation effectsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIDMC 05: PROCEEDINGS OF THE INTERNATIONAL DISPLAY MANUFACTURING CONFERENCE 2005en_US
dc.citation.spage517en_US
dc.citation.epage519en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000259399200142-
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