Numerical prediction of effective dielectric constant in organic thin-film transistors with nanocomposite gate insulator

Abstract

High performance organic thin-film transistors (OTFTs) incorporated with nanoparticles in the dielectric insulators have been demonstrated. The dielectric layers consist of cross-linked poly-4- vinylphenol (PVP) and a high dielectric titanium dioxide (TiO(2)) nanoparticles. It was found that the OTFTs with the nanocomposite dielectric layers have higher field-induced current than that of convention devices because the dielectric constant of the gate insulator is higher. Several models are also propsed to derive the dielectric constants of the nanocomposition layers. The best fit model suggests that the dielectric constant increases exponentially with filler volume at high filler volume regions, which indicates this method is effective to enchance the output power of OTFTs.