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dc.contributor.authorLin, HNen_US
dc.contributor.authorChen, HWen_US
dc.contributor.authorKo, CHen_US
dc.contributor.authorGe, CHen_US
dc.contributor.authorLin, HCen_US
dc.contributor.authorHuang, TYen_US
dc.contributor.authorLee, WCen_US
dc.date.accessioned2014-12-08T15:25:11Z-
dc.date.available2014-12-08T15:25:11Z-
dc.date.issued2005en_US
dc.identifier.isbn0-7803-9268-Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/17577-
dc.description.abstractChannel backscattering ratios of PMOSFETs with various embedded SiGe source/drain structures are analyzed in terms of the scattering theory We found that both the backscattering ratio and injection velocity are greatly influenced by the location and recess depth of SiGe source/drain. Although the strain-enhanced injection velocity is beneficial to the current gain, the accompanying backscattering ratio increase adversely impacts the overall performance, and therefore a trade-off exists between injection velocity and backscattering ratio during the optimization of such strain technique. The mechanism of increased backscattering ratio under uniaxial compressive strain is also investigated.en_US
dc.language.isoen_USen_US
dc.titleChannel backscattering characteristics of strained PMOSFETs with embedded SiGe source/drainen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGESTen_US
dc.citation.spage147en_US
dc.citation.epage150en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000236225100032-
Appears in Collections:Conferences Paper