完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chin, A | en_US |
dc.contributor.author | Laio, CC | en_US |
dc.contributor.author | Chen, C | en_US |
dc.contributor.author | Chiang, KC | en_US |
dc.contributor.author | Yu, DS | en_US |
dc.contributor.author | Yoo, WJ | en_US |
dc.contributor.author | Samudra, GS | en_US |
dc.contributor.author | Wang, T | en_US |
dc.contributor.author | Hsieh, IJ | en_US |
dc.contributor.author | McAlister, SP | en_US |
dc.contributor.author | Chi, CC | en_US |
dc.date.accessioned | 2014-12-08T15:25:11Z | - |
dc.date.available | 2014-12-08T15:25:11Z | - |
dc.date.issued | 2005 | en_US |
dc.identifier.isbn | 0-7803-9268-X | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/17578 | - |
dc.description.abstract | To improve trapping using deeper well AlGaN (chi=3.8eV), lower voltage drop in high-K AlLaO(3) barrier (kappa=23), and smaller erase current by large Delta E(c) of AILaO(3)/TaN, the SiO(2)/AlGaN/AlLaO(3)/TaN devices show good 85 degrees C memory integrity of low +/- 10V 1ms P/E, large 3.9V initial Delta V(th) and 2.4V extrapolated 10-year retention. A fast 100ps P/E of +/- 11V still gives 3.0V initial Delta V(th) and 1.6V 10-year retention. | en_US |
dc.language.iso | en_US | en_US |
dc.title | Low voltage high speed SiO(2)/AlGaN/AlLaO(3)/TaN memory with good retention | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST | en_US |
dc.citation.spage | 165 | en_US |
dc.citation.epage | 168 | en_US |
dc.contributor.department | 電機學院 | zh_TW |
dc.contributor.department | College of Electrical and Computer Engineering | en_US |
dc.identifier.wosnumber | WOS:000236225100036 | - |
顯示於類別: | 會議論文 |