統計資料
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| Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference | 105 |
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| Lanthanide and Ir-based dual metal-gate/HfAlON CMOS with large work-function difference | 105 |
| 檢視 |
|---|
| 檢視 | |
|---|---|
| 中國 | 94 |
| 美國 | 10 |
| 台灣 | 1 |
| 檢視 | |
|---|---|
| Shenzhen | 92 |
| Menlo Park | 8 |
| Ashburn | 1 |
| Beijing | 1 |
| Edmond | 1 |
| Shanghai | 1 |