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dc.contributor.authorYen, K. H.en_US
dc.contributor.authorNishizaki, S.en_US
dc.contributor.authorOhdaira, K.en_US
dc.contributor.authorMatsumura, H.en_US
dc.contributor.authorHuang, Y. T.en_US
dc.contributor.authorZan, H. W.en_US
dc.contributor.authorTsai, C. C.en_US
dc.date.accessioned2014-12-08T15:25:16Z-
dc.date.available2014-12-08T15:25:16Z-
dc.date.issued2010en_US
dc.identifier.issn1610-1634en_US
dc.identifier.urihttp://hdl.handle.net/11536/17636-
dc.identifier.urihttp://dx.doi.org/10.1002/pssc.200982901en_US
dc.description.abstractIn this study, we investigated the a-Si films which were deposited by Cat-CVD in the higher catalyzer temperature (T(cat)) regime. We studied the influence of high T(cat) on amorphous silicon (a-Si:H) thin-film properties. The information on a-Si-H bonding configuration was obtained by Fourier Transform Infrared Spectroscopy (FTIR). The film defect density was investigated by the electron spin resonance (ESR) as a function of T(cat), the distance between catalyzer and substrate (D(cs)), and the deposition pressure (P). (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheimen_US
dc.language.isoen_USen_US
dc.titleInvestigation of Cat-CVD amorphous silicon film properties under high catalyzer temperatureen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/pssc.200982901en_US
dc.identifier.journalPHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4en_US
dc.citation.volume7en_US
dc.citation.issue3-4en_US
dc.citation.spage583en_US
dc.citation.epage587en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000287213400020-
Appears in Collections:Conferences Paper


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