Investigation of Cat-CVD amorphous silicon film properties under high catalyzer temperature

doi:10.1002/pssc.200982901

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Yen, K. H.	en_US
dc.contributor.author	Nishizaki, S.	en_US
dc.contributor.author	Ohdaira, K.	en_US
dc.contributor.author	Matsumura, H.	en_US
dc.contributor.author	Huang, Y. T.	en_US
dc.contributor.author	Zan, H. W.	en_US
dc.contributor.author	Tsai, C. C.	en_US
dc.date.accessioned	2014-12-08T15:25:16Z	-
dc.date.available	2014-12-08T15:25:16Z	-
dc.date.issued	2010	en_US
dc.identifier.issn	1610-1634	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17636	-
dc.identifier.uri	http://dx.doi.org/10.1002/pssc.200982901	en_US
dc.description.abstract	In this study, we investigated the a-Si films which were deposited by Cat-CVD in the higher catalyzer temperature (T(cat)) regime. We studied the influence of high T(cat) on amorphous silicon (a-Si:H) thin-film properties. The information on a-Si-H bonding configuration was obtained by Fourier Transform Infrared Spectroscopy (FTIR). The film defect density was investigated by the electron spin resonance (ESR) as a function of T(cat), the distance between catalyzer and substrate (D(cs)), and the deposition pressure (P). (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim	en_US
dc.language.iso	en_US	en_US
dc.title	Investigation of Cat-CVD amorphous silicon film properties under high catalyzer temperature	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1002/pssc.200982901	en_US
dc.identifier.journal	PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4	en_US
dc.citation.volume	7	en_US
dc.citation.issue	3-4	en_US
dc.citation.spage	583	en_US
dc.citation.epage	587	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000287213400020	-
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