Investigation of Cat-CVD amorphous silicon film properties under high catalyzer temperature

標題:	Investigation of Cat-CVD amorphous silicon film properties under high catalyzer temperature
作者:	Yen, K. H. Nishizaki, S. Ohdaira, K. Matsumura, H. Huang, Y. T. Zan, H. W. Tsai, C. C. 光電工程學系 Department of Photonics
公開日期:	2010
摘要:	In this study, we investigated the a-Si films which were deposited by Cat-CVD in the higher catalyzer temperature (T(cat)) regime. We studied the influence of high T(cat) on amorphous silicon (a-Si:H) thin-film properties. The information on a-Si-H bonding configuration was obtained by Fourier Transform Infrared Spectroscopy (FTIR). The film defect density was investigated by the electron spin resonance (ESR) as a function of T(cat), the distance between catalyzer and substrate (D(cs)), and the deposition pressure (P). (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
URI:	http://hdl.handle.net/11536/17636 http://dx.doi.org/10.1002/pssc.200982901
ISSN:	1610-1634
DOI:	10.1002/pssc.200982901
期刊:	PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7 NO 3-4
Volume:	7
Issue:	3-4
起始頁:	583
結束頁:	587
顯示於類別：	會議論文

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