Low-leakage In(0.53)Ga(0.47)As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic In(x)Ga(1-x)P buffer

doi:10.1117/12.577048

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DC 欄位	值	語言
dc.contributor.author	Lin, CK	en_US
dc.contributor.author	Kuo, HC	en_US
dc.contributor.author	Liao, YS	en_US
dc.contributor.author	Lin, GR	en_US
dc.date.accessioned	2014-12-08T15:25:16Z	-
dc.date.available	2014-12-08T15:25:16Z	-
dc.date.issued	2005	en_US
dc.identifier.isbn	0-8194-5578-4	en_US
dc.identifier.issn	0277-786X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17648	-
dc.identifier.uri	http://dx.doi.org/10.1117/12.577048	en_US
dc.description.abstract	A novel top-illuminated metamorphic In(0.53)Ga(0.47)As p-i-n photodiodes (MM-PlNPD) grown on GaAs substrate by using a linearly graded In(x)Ga(1-x)P (x graded from 0.51 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power (NEP), and operational bandwidth of the MM-PINPD with aperture diameter of 60 mu m are 13 pA, 0.77/0.59 (1310/1550 nm) A/W, 6.9x10(-11) W/Hz(1/2), and 7.5 GHz, respectively. The performances of the MM-PINPD on GaAs are demonstrated to be better than those of a similar device made on InGaAs/InP substrate.	en_US
dc.language.iso	en_US	en_US
dc.subject	metamorphic	en_US
dc.subject	InGaAs	en_US
dc.subject	heterostructure	en_US
dc.subject	p-i-n photodiode	en_US
dc.subject	GaAs	en_US
dc.title	Low-leakage In(0.53)Ga(0.47)As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic In(x)Ga(1-x)P buffer	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1117/12.577048	en_US
dc.identifier.journal	SEMICONDUCTOR AND ORGANIC OPTOELECTRONIC MATERIALS AND DEVICES	en_US
dc.citation.volume	5624	en_US
dc.citation.spage	399	en_US
dc.citation.epage	406	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000227356100051	-
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