Title: A physics-based transit time model for GaInP/GaAs HBT devices
Authors: Tseng, Sheng-Che
Meng, Chinchun
Chen, Wei-Yu
Su, Jen-Yi
電信工程研究所
Institute of Communications Engineering
Keywords: transit time;GaInP/GaAs HBT;minority charge;HICUM and VBIC
Issue Date: 2005
Abstract: A compact physics-based transit time model has been established for the GaInP/GaAs HBT device. The VBIC model fails to describe the transit time frequency versus bias (I(C), V(CE)) especially at low and medium current regimes. Starting with the HICUM model, we introduce a new time constant to describe the transit time frequency versus bias (I(C), V(CE)) more precisely. This model has obvious advantage over the VBIC model to show the relation between the f(t) versus bias (I(C), V(CE)) in the low and medium current regimes for GaInP/GaAs HBT devices.
URI: http://hdl.handle.net/11536/17703
ISBN: 0-7803-9433-X
Journal: 2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5
Begin Page: 1031
End Page: 1034
Appears in Collections:Conferences Paper