標題: | An analysis of base current effect on the anomalous dip of scattering parameter S(12) in SiGeHBTs |
作者: | Chen, Han-Yu Chen, Kun-Ming Huang, Guo-Wei Chang, Chun-Yen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | anomalous dip;base current;heterojunction bipolar transistor (HBT);S-parameters;SiGe |
公開日期: | 2005 |
摘要: | In this paper, the anomalous dip in scattering parameters S(12) of SiGe HBTs is explained quantitatively for the first time. It was found that under constant collector-emitter voltage (V(CE)), an increase of base current (which corresponds to an increase of base-emitter capacitance (C pi) enhances the anomalous dip. |
URI: | http://hdl.handle.net/11536/17708 |
ISBN: | 0-7803-9433-X |
期刊: | 2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5 |
起始頁: | 1082 |
結束頁: | 1084 |
Appears in Collections: | Conferences Paper |