An analysis of base current effect on the anomalous dip of scattering parameter S(12) in SiGeHBTs

Title:	An analysis of base current effect on the anomalous dip of scattering parameter S(12) in SiGeHBTs
Authors:	Chen, Han-Yu Chen, Kun-Ming Huang, Guo-Wei Chang, Chun-Yen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Keywords:	anomalous dip;base current;heterojunction bipolar transistor (HBT);S-parameters;SiGe
Issue Date:	2005
Abstract:	In this paper, the anomalous dip in scattering parameters S(12) of SiGe HBTs is explained quantitatively for the first time. It was found that under constant collector-emitter voltage (V(CE)), an increase of base current (which corresponds to an increase of base-emitter capacitance (C pi) enhances the anomalous dip.
URI:	http://hdl.handle.net/11536/17708
ISBN:	0-7803-9433-X
Journal:	2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5
Begin Page:	1082
End Page:	1084
Appears in Collections:	Conferences Paper