標題: An analysis of base current effect on the anomalous dip of scattering parameter S(12) in SiGeHBTs
作者: Chen, Han-Yu
Chen, Kun-Ming
Huang, Guo-Wei
Chang, Chun-Yen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: anomalous dip;base current;heterojunction bipolar transistor (HBT);S-parameters;SiGe
公開日期: 2005
摘要: In this paper, the anomalous dip in scattering parameters S(12) of SiGe HBTs is explained quantitatively for the first time. It was found that under constant collector-emitter voltage (V(CE)), an increase of base current (which corresponds to an increase of base-emitter capacitance (C pi) enhances the anomalous dip.
URI: http://hdl.handle.net/11536/17708
ISBN: 0-7803-9433-X
期刊: 2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5
起始頁: 1082
結束頁: 1084
Appears in Collections:Conferences Paper