An analysis of base current effect on the anomalous dip of scattering parameter S(12) in SiGeHBTs

標題:	An analysis of base current effect on the anomalous dip of scattering parameter S(12) in SiGeHBTs
作者:	Chen, Han-Yu Chen, Kun-Ming Huang, Guo-Wei Chang, Chun-Yen 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	anomalous dip;base current;heterojunction bipolar transistor (HBT);S-parameters;SiGe
公開日期:	2005
摘要:	In this paper, the anomalous dip in scattering parameters S(12) of SiGe HBTs is explained quantitatively for the first time. It was found that under constant collector-emitter voltage (V(CE)), an increase of base current (which corresponds to an increase of base-emitter capacitance (C pi) enhances the anomalous dip.
URI:	http://hdl.handle.net/11536/17708
ISBN:	0-7803-9433-X
期刊:	2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5
起始頁:	1082
結束頁:	1084
顯示於類別：	會議論文