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dc.contributor.authorLin, Yueh-Chinen_US
dc.contributor.authorChang, J. W.en_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorChang, X. Y.en_US
dc.date.accessioned2014-12-08T15:25:19Z-
dc.date.available2014-12-08T15:25:19Z-
dc.date.issued2005en_US
dc.identifier.isbn0-7803-9433-Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/17709-
dc.description.abstractIn this paper, doping effects for linearity improvement of InGaP/InGaAs PHEMT devices are discussed. The doping techniques of interest are the light channel doping and the uniform doping introduced to the conventional delta-doped PHEMT structure. Circuit analysis is performed for estimation of the third-order intermodulation distortion levels (IM3). The linearity performance is compared through the extracted parameters from measurement.en_US
dc.language.isoen_USen_US
dc.subjectchannel dopeden_US
dc.subjectuniform dopingen_US
dc.subjectInGaP/InGaAsen_US
dc.subjectPHEMTen_US
dc.subjectIM3en_US
dc.titleOn the doping effects for linearity improvement of InGaP/InGaAs PHEMTen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5en_US
dc.citation.spage1095en_US
dc.citation.epage1098en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000237449901107-
Appears in Collections:Conferences Paper


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