On the doping effects for linearity improvement of InGaP/InGaAs PHEMT

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Yueh-Chin	en_US
dc.contributor.author	Chang, J. W.	en_US
dc.contributor.author	Chang, Edward Yi	en_US
dc.contributor.author	Chang, X. Y.	en_US
dc.date.accessioned	2014-12-08T15:25:19Z	-
dc.date.available	2014-12-08T15:25:19Z	-
dc.date.issued	2005	en_US
dc.identifier.isbn	0-7803-9433-X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17709	-
dc.description.abstract	In this paper, doping effects for linearity improvement of InGaP/InGaAs PHEMT devices are discussed. The doping techniques of interest are the light channel doping and the uniform doping introduced to the conventional delta-doped PHEMT structure. Circuit analysis is performed for estimation of the third-order intermodulation distortion levels (IM3). The linearity performance is compared through the extracted parameters from measurement.	en_US
dc.language.iso	en_US	en_US
dc.subject	channel doped	en_US
dc.subject	uniform doping	en_US
dc.subject	InGaP/InGaAs	en_US
dc.subject	PHEMT	en_US
dc.subject	IM3	en_US
dc.title	On the doping effects for linearity improvement of InGaP/InGaAs PHEMT	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5	en_US
dc.citation.spage	1095	en_US
dc.citation.epage	1098	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000237449901107	-
顯示於類別：	會議論文