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dc.contributor.authorKer, Ming-Douen_US
dc.contributor.authorLin, Kun-Hsienen_US
dc.date.accessioned2014-12-08T15:25:20Z-
dc.date.available2014-12-08T15:25:20Z-
dc.date.issued2005en_US
dc.identifier.isbn978-0-7803-9339-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/17723-
dc.description.abstractElectrostatic discharge (ESD) protection design for mixed-voltage I/O interfaces has been one of the key challenges of system-on-a-chip (SOC) implementation in nanoscale CMOS processes. This paper presents an overview on the design concept and circuit implementations of the ESD protection designs for mixed-voltage I/O interfaces without using the additional thick gate-oxide process. The ESD design constraints in mixed-voltage I/O interfaces, the classification, and analysis of ESD protection designs for mixed-voltage I/O interfaces are presented and discussed.en_US
dc.language.isoen_USen_US
dc.titleESD protection design for mixed-voltage I/O interfaces - Overviewen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2005 IEEE CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS, PROCEEDINGSen_US
dc.citation.spage493en_US
dc.citation.epage498en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000245210600107-
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