統計資料
總造訪次數
| 檢視 | |
|---|---|
| Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETs | 111 |
本月總瀏覽
檔案下載
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| 000230058000007.pdf | 7 |
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| 檢視 | |
|---|---|
| Single-electron emission of traps in HfSiON as high-k gate dielectric for MOSFETs | 111 |
| 檢視 | |
|---|---|
| 000230058000007.pdf | 7 |
| 檢視 | |
|---|---|
| 中國 | 96 |
| 美國 | 14 |
| 檢視 | |
|---|---|
| Shenzhen | 95 |
| Menlo Park | 9 |
| Kensington | 4 |
| Beijing | 1 |
| Edmond | 1 |