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dc.contributor.authorWu, Yu-Shengen_US
dc.contributor.authorSu, Pinen_US
dc.date.accessioned2014-12-08T15:25:22Z-
dc.date.available2014-12-08T15:25:22Z-
dc.date.issued2009en_US
dc.identifier.isbn978-1-4244-4256-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/17748-
dc.identifier.urihttp://dx.doi.org/10.1109/ASSCC.2009.5357181en_US
dc.description.abstractWe have proposed an analytical model for quantum confinement effects in short-channel Gate-All-Around (GAA) MOSFETs. This model accurately predicts the eigen-energy shift and eigen-function modulation caused by the short channel effects in lightly doped GAA devices. It shows that the threshold voltage (V(th)) variation due to channel diameter variation is larger than that due to channel length variation because of the significant quantum confinement in ultra-scaled devices. Our model indicates that the channel diameter of GAA MOSFETs can be optimized to reduce the V(th) variation,en_US
dc.language.isoen_USen_US
dc.titleQuantum Confinement Effect in Short-Channel Gate-All-Around MOSFETs and Its Impact on the Sensitivity of Threshold Voltage to Process Variationsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/ASSCC.2009.5357181en_US
dc.identifier.journal2009 IEEE INTERNATIONAL SOI CONFERENCEen_US
dc.citation.spage69en_US
dc.citation.epage70en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000276151400030-
Appears in Collections:Conferences Paper


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