Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region

標題:	Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region
作者:	Wu, Yu-Sheng Su, Pin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	Gate-all-around (GAA);MOSFET;quantum effects;short-channel effect
公開日期:	1-十一月-2009
摘要:	This paper presents an analytical model for quantum-confinement effects in short-channel gate-all-around (GAA) MOSFETs under the subthreshold region. Our analytical model accurately predicts the impact of short-channel effects and doping concentration on the quantum-confinement effects. This scalable quantum-confinement model is crucial to the ultrascaled GAA MOSFET design.
URI:	http://dx.doi.org/10.1109/TED.2009.2030714 http://hdl.handle.net/11536/6471
ISSN:	0018-9383
DOI:	10.1109/TED.2009.2030714
期刊:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume:	56
Issue:	11
起始頁:	2720
結束頁:	2725
顯示於類別：	期刊論文

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