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dc.contributor.authorYang, CYen_US
dc.contributor.authorHung, CCen_US
dc.date.accessioned2014-12-08T15:25:23Z-
dc.date.available2014-12-08T15:25:23Z-
dc.date.issued2005en_US
dc.identifier.isbn0-7803-8834-8en_US
dc.identifier.issn0271-4302en_US
dc.identifier.urihttp://hdl.handle.net/11536/17775-
dc.description.abstractIn order to reduce distortion due to variation of the gate overdrive and the threshold voltage, a novel low-voltage constant-resistance sampling switch is proposed in this paper. The technique to reduce nonlinearity can be used in a high resolution sample and hold circuit. TSMC 0.18um standard CMOS technology is utilized in this research. Results indicate that much lower Total Harmonic Distortion (THD) is achieved by the proposed circuit. The low THD meets the requirements in the application of the low-voltage low-distortion switched-capacitor circuits.en_US
dc.language.isoen_USen_US
dc.titleA low-voltage low-distortion MOS sampling switchen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2005 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS), VOLS 1-6, CONFERENCE PROCEEDINGSen_US
dc.citation.spage3131en_US
dc.citation.epage3134en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000232002403029-
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