標題: Impact of hot carrier stress on RF power characteristics of MOSFETs
作者: Huang, SY
Chen, KM
Huang, GW
Yang, DY
Chang, CY
Liang, V
Tseng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: hot-carrier stress;load-pull measurement;power;linearity
公開日期: 2005
摘要: This paper investigates hot-carrier (HQ effects on the RF power and linearity characteristics of MOS transistors using load-pull measurement. We found that the RF power characteristics are affected by the HC stress, and the linearity of MOS transistors is clearly degraded after HC stress at constant gate voltage measurement. However, at high gate voltage bias, the HC-induced power degradation is much reduced compared with that under low gate voltage regimes. In addition, HC effects on linearity can be softened by biasing the transistor at constant drain currents. These experimental observations can be explained by the change of threshold voltage, transconductance, subthreshold swing, and mobility degradation coefficient under HC stress.
URI: http://hdl.handle.net/11536/17805
ISBN: 0-7803-8845-3
ISSN: 0149-645X
期刊: 2005 IEEE MTT-S International Microwave Symposium, Vols 1-4
起始頁: 161
結束頁: 164
Appears in Collections:Conferences Paper