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dc.contributor.authorKao, HLen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorHung, BFen_US
dc.contributor.authorLai, JMen_US
dc.contributor.authorLee, CFen_US
dc.contributor.authorLi, MFen_US
dc.contributor.authorSamudra, GSen_US
dc.contributor.authorZhu, Cen_US
dc.contributor.authorXia, ZLen_US
dc.contributor.authorLiu, XYen_US
dc.contributor.authorKang, JFen_US
dc.date.accessioned2014-12-08T15:25:27Z-
dc.date.available2014-12-08T15:25:27Z-
dc.date.issued2005en_US
dc.identifier.isbn4-900784-00-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/17837-
dc.description.abstractUsing microstrip line design to screen substrate resistance generated RF noise, very low 1.1 dB min. noise figure (NFmin) and high 12 dB associate gain are measured at 10 GHz of 0.18 mu m MOSFET on plastic without de-embedding. The die on plastic was thinned to 30 mu m that allows applying uniaxial strain to further lower the 10 GHz NFmin to only 0.92 dB and comparable well with the 0.13 mu m and 90nm nodes MOSFETs.en_US
dc.language.isoen_USen_US
dc.titleStrain-induced very low noise RF MOSFETs on flexible plastic substrateen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2005 Symposium on VLSI Technology, Digest of Technical Papersen_US
dc.citation.spage160en_US
dc.citation.epage161en_US
dc.contributor.department電機學院zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.identifier.wosnumberWOS:000234973100062-
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