標題: Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large triangle V-th and good retention
作者: Lai, CH
Chin, A
Chiang, KC
Yoo, WJ
Cheng, CF
McAlister, SP
Chi, CC
Wu, P
電機學院
College of Electrical and Computer Engineering
公開日期: 2005
摘要: Using the strong trapping capability of novel AlN (kappa=10), low voltage drop in high-kappa layers and high workfunction IrO2 with low leakage current, the SiO2/AlN/HfAlO(K=17)/IrO2 device shows good 85 degrees C memory integrity of fast 100 is erase, large 3.7V Delta V-th and 1.9V extrapolated memory window for 10-year retention at low 13V program/erase. These increase to 5.5V Delta V-th and 3.4V for 85 degrees C 10-year retention at 1 ms erase.
URI: http://hdl.handle.net/11536/17838
ISBN: 4-900784-00-1
期刊: 2005 Symposium on VLSI Technology, Digest of Technical Papers
起始頁: 210
結束頁: 211
顯示於類別:會議論文