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dc.contributor.authorKUO, JTen_US
dc.date.accessioned2014-12-08T15:03:14Z-
dc.date.available2014-12-08T15:03:14Z-
dc.date.issued1995-08-01en_US
dc.identifier.issn0018-9480en_US
dc.identifier.urihttp://dx.doi.org/10.1109/22.402277en_US
dc.identifier.urihttp://hdl.handle.net/11536/1789-
dc.description.abstractThe quasi-TEM spectral domain approach (SDA) is extended to rigorously and efficiently analyze single and multiple coupled microstrip lines of arbitrary metallization thickness, The charge distributions on both the horizontal and vertical conductor surfaces are modeled by global basis functions, This results in a relatively small matrix for accurate determination of the line parameters of coupled thick microstrips. A convergence study is performed for the results of a pair of coupled lines with crucial structural parameters to explore the conditions for obtaining reliable solutions using the technique. Results for thick microstrips are validated through comparison with those from available measurements and another theoretical technique. The soundness of the technique is further demonstrated by looking into the trend of the results obtained by a simplified model in which the structural parameters are pushed, step by step, to the numerical extremities. Variations of circuit parameters of a four-line coupled microstrip structure due to the change of finite metallization thickness are presented and discussed.en_US
dc.language.isoen_USen_US
dc.titleACCURATE QUASI-TEM SPECTRAL-DOMAIN ANALYSIS OF SINGLE AND MULTIPLE COUPLED MICROSTRIP LINES OF ARBITRARY METALLIZATION THICKNESSen_US
dc.typeArticleen_US
dc.identifier.doi10.1109/22.402277en_US
dc.identifier.journalIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUESen_US
dc.citation.volume43en_US
dc.citation.issue8en_US
dc.citation.spage1881en_US
dc.citation.epage1888en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:A1995RN56500018-
dc.citation.woscount15-
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