標題: Using tunneling junction to enhance hole-injection in organic light-emitting diodes
作者: Chang, Chan-Ching
Hwang, Shiao-Wen
Hsieh, Ming-Ta
Ma, Jia-Wei
Chen, Chin H.
Chen, Jenn-Fang
電子物理學系
Department of Electrophysics
公開日期: 2005
摘要: We demonstrate enhanced hole-injection and lower driving voltage in vacuum-deposited organic light-emitting diodes (OLEDs) with a novel tunneling junction composed of the Mg:Alq(3)/WO3 layer. The device, ITO/Mg:Alq(3)/WO3/NPB/Alq(3)/LiFAl achieved one of the lowest driving voltages of 5.8 V at 20mA/cm(2) for conventional small molecule OLEDs. We propose the laminated Mg:Alq(3)/WO3/NPB functions as a Fowler Nordheim tunneling junction, which can improve hole-injection. It was found to also prolong device lifetime under dc driving, that is comparable to the best reported for the Alq(3) emitter.
URI: http://hdl.handle.net/11536/17930
期刊: IDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2
起始頁: 687
結束頁: 690
Appears in Collections:Conferences Paper