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dc.contributor.authorChang, YHen_US
dc.contributor.authorLin, GRen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorChi, JYen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:25:37Z-
dc.date.available2014-12-08T15:25:37Z-
dc.date.issued2005en_US
dc.identifier.isbn0-7803-9217-5en_US
dc.identifier.issn1092-8081en_US
dc.identifier.urihttp://hdl.handle.net/11536/18020-
dc.description.abstractWe present monolithically quantum-dot vertical-cavity surface-emitting laser (QD VCSELs) operating in the 1.3 mu m optical communication wavelength. The QD VCSELs have adapted fully doped structure on GaAs substrate. The output power is similar to 330 mu W with slope efficiency of 0.18 W/A at room temperature. Single mode operation was obtained with side-mode suppression ratio of > 30 dB.en_US
dc.language.isoen_USen_US
dc.subjectquantum dotsen_US
dc.subjectsurface emitting laseren_US
dc.subjectsingle modeen_US
dc.subjectbandwidthen_US
dc.titleSinglemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 mu m with side-mode suppression ratio > 30dBen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS)en_US
dc.citation.spage399en_US
dc.citation.epage400en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000235109700202-
Appears in Collections:Conferences Paper


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