Singlemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 mu m with side-mode suppression ratio > 30dB

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Chang, YH	en_US
dc.contributor.author	Lin, GR	en_US
dc.contributor.author	Kuo, HC	en_US
dc.contributor.author	Chi, JY	en_US
dc.contributor.author	Wang, SC	en_US
dc.date.accessioned	2014-12-08T15:25:37Z	-
dc.date.available	2014-12-08T15:25:37Z	-
dc.date.issued	2005	en_US
dc.identifier.isbn	0-7803-9217-5	en_US
dc.identifier.issn	1092-8081	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18020	-
dc.description.abstract	We present monolithically quantum-dot vertical-cavity surface-emitting laser (QD VCSELs) operating in the 1.3 mu m optical communication wavelength. The QD VCSELs have adapted fully doped structure on GaAs substrate. The output power is similar to 330 mu W with slope efficiency of 0.18 W/A at room temperature. Single mode operation was obtained with side-mode suppression ratio of > 30 dB.	en_US
dc.language.iso	en_US	en_US
dc.subject	quantum dots	en_US
dc.subject	surface emitting laser	en_US
dc.subject	single mode	en_US
dc.subject	bandwidth	en_US
dc.title	Singlemode monolithically quantum-dot vertical-cavity surface-emitting laser in 1.3 mu m with side-mode suppression ratio > 30dB	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2005 IEEE LEOS Annual Meeting Conference Proceedings (LEOS)	en_US
dc.citation.spage	399	en_US
dc.citation.epage	400	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.identifier.wosnumber	WOS:000235109700202	-
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