Self-substrate-triggered technique to enhance turn-on uniformity of multi-finger ESD protection devices

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Ker, MD	en_US
dc.contributor.author	Chen, JH	en_US
dc.contributor.author	Hsu, KC	en_US
dc.date.accessioned	2014-12-08T15:25:38Z	-
dc.date.available	2014-12-08T15:25:38Z	-
dc.date.issued	2005	en_US
dc.identifier.isbn	0-7803-9058-X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18050	-
dc.description.abstract	A novel self-substrate-triggered (SST) technique is proposed to solve the non-uniform turn-on issue of the multi-finger GGNMOS for ESD protection. The first turned-on center finger is used to trigger on all fingers in the GGNMOS structure with self-substrate-triggered technique. So, the turn-on uniformity and ESD robustness of GGNMOS can be greatly improved by the new proposed self-substrate-triggered technique.	en_US
dc.language.iso	en_US	en_US
dc.title	Self-substrate-triggered technique to enhance turn-on uniformity of multi-finger ESD protection devices	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2005 IEEE VLSI-TSA International Symposium on VLSI Technology (VLSI-TSA-TECH), Proceedings of Technical Papers	en_US
dc.citation.spage	17	en_US
dc.citation.epage	18	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.identifier.wosnumber	WOS:000231405800005	-
顯示於類別：	會議論文