Inversion MOS capacitance extraction for ultra-thin gate oxide using BSIM4

Full metadata record

DC Field	Value	Language
dc.contributor.author	Lee, W	en_US
dc.contributor.author	Su, KW	en_US
dc.contributor.author	Chiang, CS	en_US
dc.contributor.author	Liu, S	en_US
dc.contributor.author	Su, P	en_US
dc.date.accessioned	2014-12-08T15:25:38Z	-
dc.date.available	2014-12-08T15:25:38Z	-
dc.date.issued	2005	en_US
dc.identifier.isbn	0-7803-9058-X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18052	-
dc.language.iso	en_US	en_US
dc.title	Inversion MOS capacitance extraction for ultra-thin gate oxide using BSIM4	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2005 IEEE VLSI-TSA International Symposium on VLSI Technology (VLSI-TSA-TECH), Proceedings of Technical Papers	en_US
dc.citation.spage	62	en_US
dc.citation.epage	63	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000231405800023	-
Appears in Collections:	Conferences Paper