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dc.contributor.authorLin, CPen_US
dc.contributor.authorTsui, BYen_US
dc.date.accessioned2014-12-08T15:25:38Z-
dc.date.available2014-12-08T15:25:38Z-
dc.date.issued2005en_US
dc.identifier.isbn0-7803-9058-Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/18053-
dc.description.abstractIt has been reported that Modified-Schottky-Barrier (MSB) FinFET can solve the problem of low on-state/off-state current ratio that the conventional SB MOSFETs have. In this work, we report for the first time that high performance n- and p-channel MSB devices can be fabricated with the same metal silicide and process technique. Detailed device characteristics as well as hot carrier reliability of MSB FinFETs are investigated. It is concluded that the high performance MSB FinFET is also highly reliable. The simple process and low thermal budget features make the MSB FinFET a very promising nano device.en_US
dc.language.isoen_USen_US
dc.titleCharacteristics of Modified-Schottky-Barrier (MSB) FinFETsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2005 IEEE VLSI-TSA International Symposium on VLSI Technology (VLSI-TSA-TECH), Proceedings of Technical Papersen_US
dc.citation.spage118en_US
dc.citation.epage119en_US
dc.contributor.department電機學院zh_TW
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentCollege of Electrical and Computer Engineeringen_US
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000231405800046-
Appears in Collections:Conferences Paper


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