Characteristics of Modified-Schottky-Barrier (MSB) FinFETs

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, CP	en_US
dc.contributor.author	Tsui, BY	en_US
dc.date.accessioned	2014-12-08T15:25:38Z	-
dc.date.available	2014-12-08T15:25:38Z	-
dc.date.issued	2005	en_US
dc.identifier.isbn	0-7803-9058-X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18053	-
dc.description.abstract	It has been reported that Modified-Schottky-Barrier (MSB) FinFET can solve the problem of low on-state/off-state current ratio that the conventional SB MOSFETs have. In this work, we report for the first time that high performance n- and p-channel MSB devices can be fabricated with the same metal silicide and process technique. Detailed device characteristics as well as hot carrier reliability of MSB FinFETs are investigated. It is concluded that the high performance MSB FinFET is also highly reliable. The simple process and low thermal budget features make the MSB FinFET a very promising nano device.	en_US
dc.language.iso	en_US	en_US
dc.title	Characteristics of Modified-Schottky-Barrier (MSB) FinFETs	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2005 IEEE VLSI-TSA International Symposium on VLSI Technology (VLSI-TSA-TECH), Proceedings of Technical Papers	en_US
dc.citation.spage	118	en_US
dc.citation.epage	119	en_US
dc.contributor.department	電機學院	zh_TW
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	College of Electrical and Computer Engineering	en_US
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000231405800046	-
顯示於類別：	會議論文