標題: Statistical Analysis of Metal Gate Workfunction Variability, Process Variation, and Random Dopant Fluctuation in Nano-CMOS Circuits
作者: Hwang, Chih-Hong
Li, Tien-Yeh
Han, Ming-Hung
Lee, Kuo-Fu
Cheng, Hui-Wen
Li, Yiming
傳播研究所
Institute of Communication Studies
關鍵字: Emerging device technology;intrinsic parameter fluctuation;nanoscale MOSFET;circuit;coupled device-circuit simulation;modeling and simulation
公開日期: 2009
摘要: This work for the first time estimates the influences of the intrinsic parameter fluctuations consisting of metal gate workfunction fluctuation (WKF), process variation effect (PVE) and random dopant fluctuation (RDF) on 16-nm-gate planar metal-oxide-semiconductor field effect transistors (MOSFETs) and circuits. The WKF and RDF dominate the threshold voltage fluctuation; however, the WKF brings less impact on the gate capacitance due to the screening effect of the inversion layer. The fluctuation of timing characteristics depends on the threshold voltage fluctuation, and therefore is proportional to the trend of threshold voltage fluctuation. For an amplifier circuit, the high-frequency characteristics, the circuit gain, the 3dB bandwidth, the unity-gain bandwidth power, and the power-added efficiency, are explored consequently. Similar to the trend of the cutoff frequency, the PVE and RDF dominate both the device and circuits characteristic fluctuations due to the significant gate capacitance fluctuations and the WKF is less important at this simulation scenario. The extensive study assesses the fluctuations on circuit performance and reliability, which can in turn be used to optimize nanoscale MOSFET and circuits.
URI: http://hdl.handle.net/11536/18066
ISBN: 978-1-4244-3948-5
ISSN: 1946-1569
期刊: 2009 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES
起始頁: 99
結束頁: 102
Appears in Collections:Conferences Paper