完整後設資料紀錄
DC 欄位語言
dc.contributor.authorLiang, SWen_US
dc.contributor.authorShao, TLen_US
dc.contributor.authorChen, Cen_US
dc.date.accessioned2014-12-08T15:25:40Z-
dc.date.available2014-12-08T15:25:40Z-
dc.date.issued2005en_US
dc.identifier.isbn0-7803-8906-9en_US
dc.identifier.issn0569-5503en_US
dc.identifier.urihttp://hdl.handle.net/11536/18088-
dc.description.abstractIn flip-chip solder joints, Cu has been used as a under-bump metallization (UBM) for its excellent wettability with solders. In addition, electromigration has become an crucial reliability concerns for fine-pitch flip chip solder joints. In this paper, 3-D finite element method was employed to simulate the current density distribution for the eutectic SnPb solder joints with 5 mu m, 10 mu m, and 20 mu m thick Cu UBM. It was found that the thicker the UBM is, the lower the maximum current density inside the solder. The maximum current density decreased from 4.37 X. 10(4) A/cm(2) to 7.54 x 10(3) A/cm(2) when the thickness of the UBM changed from 5 gm to 20 mu m. Thicker Cu UBM can, effectively relieve the current crowding effect inside the solder.en_US
dc.language.isoen_USen_US
dc.title3-D simulation on current density distribution in flip-cbip solder joints with thick CuUBM under current stressingen_US
dc.typeProceedings Paperen_US
dc.identifier.journal55th Electronic Components & Technology Conference, Vols 1 and 2, 2005 Proceedingsen_US
dc.citation.spage1416en_US
dc.citation.epage1420en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000230581600219-
顯示於類別:會議論文