標題: | Correlation between surface charge accumulation and excitation intensity dependent red-shifted micro-photoluminescence of Si-implanted quartz with embedded Si nanocrystals |
作者: | Lin, CJ Yu, KC Kuo, HC Ou-Yang, MJ Lin, GR 光電工程學系 Department of Photonics |
公開日期: | 2004 |
摘要: | The excitation intensity dependency of nanocrystallite Si (nc-Si) related micro-photoluminescence (mu-PL) from the multi-recipe Si-implanted quartz is characterized. The mu-PL at 724 nm contributed by nc-Si with 3-4 nm diameter is maximized after annealing at 1100degreesC for 3 hours. By increasing the excitation intensity from 10 kW/cm(2) to 300 kW/cm(2), the mu-PLs of 1-hr and 3-hr annealed quartz significantly red-shift from 723 nm to 725 nm and from 724 nm to 735 nm, respectively. This can be explained by the anomalous quantum stark effect due to a surface electric field oriented from photo-ionized nc-Si dots to quartz surface. After 1-hr illumination at power of 300 kW/cm(2), the mu-PL peak wavelength of 3-hr annealed sample is further red-shifted by 2.5 nm. By measuring the accumulated surface charges built up during optical excitation process, the correlation between excitation -intensity dependent PL wavelength red-shift and the photo-ionized nc-Si surface electric-field related quantum stark effect is primarily elucidated. |
URI: | http://hdl.handle.net/11536/18092 |
ISBN: | 1-55899-758-X |
ISSN: | 0272-9172 |
期刊: | AMORPHOUS AND NANOCRYSTALLINE SILICON SCIENCE AND TECHNOLOGY- 2004 |
Volume: | 808 |
起始頁: | 23 |
結束頁: | 28 |
Appears in Collections: | Conferences Paper |