A method to enhance the data transfer rate of phase change recording media

doi:10.1117/12.556003

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DC 欄位	值	語言
dc.contributor.author	Yeh, TT	en_US
dc.contributor.author	Hsieh, TE	en_US
dc.contributor.author	Shieh, HPD	en_US
dc.date.accessioned	2014-12-08T15:25:44Z	-
dc.date.available	2014-12-08T15:25:44Z	-
dc.date.issued	2004	en_US
dc.identifier.isbn	0-8194-5293-9	en_US
dc.identifier.issn	0277-786X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18144	-
dc.identifier.uri	http://dx.doi.org/10.1117/12.556003	en_US
dc.description.abstract	Nitrogen doping was applied to enhance the velocity of amorphous-crystalline phase transformation. The nitrogen doping was able to produce tiny nitride precipitates uniformly distributed in the recording layer and provided numerous preferential sites for amorphous-crystalline transition. At the doping condition of N-2/Ar ratio = 3%, the recrystallization velocity of GeInSbTe phase change recording media was increased up to 1.6 times without severely damaging the signal jitter values.	en_US
dc.language.iso	en_US	en_US
dc.subject	nitrogen doping	en_US
dc.subject	phase transformation	en_US
dc.subject	recrystallization velocity	en_US
dc.subject	GeInSbTe	en_US
dc.title	A method to enhance the data transfer rate of phase change recording media	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1117/12.556003	en_US
dc.identifier.journal	OPTICAL DATA STORAGE 2004	en_US
dc.citation.volume	5380	en_US
dc.citation.spage	515	en_US
dc.citation.epage	523	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000224377800063	-
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