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dc.contributor.authorPeng, TYen_US
dc.contributor.authorYao, YDen_US
dc.contributor.authorChen, SYen_US
dc.contributor.authorWang, YHen_US
dc.contributor.authorChen, WCen_US
dc.contributor.authorGao, MJen_US
dc.contributor.authorTang, DDen_US
dc.date.accessioned2014-12-08T15:25:45Z-
dc.date.available2014-12-08T15:25:45Z-
dc.date.issued2004en_US
dc.identifier.isbn3-527-40577-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/18167-
dc.identifier.urihttp://dx.doi.org/10.1002/pssc.200405519en_US
dc.description.abstractThe crystallization structure and thickness of PtMn layer in a magnetic tunnel junction system are important factors to improve its exchange bias effect. This study shows that the PtMn layer could be changed from a FCC (111) structure to a FCT (111) structure after annealing above 270 degreesC. The minimum thickness of PtMn layer is found to be 10 nm for exchange coupling effect to be occurred in our MTJ system. The magnetic exchange effect between PtMn and SAF layers is near 4,300 Oe. Annealing temperatures can be higher than 400 degreesC for samples without patterning; however, temperature at 275 degreesC is too high for samples after patterning. This may be due to the breakdown of edges of the patterned samples as well as the complicated environments around the patterned samples. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.en_US
dc.language.isoen_USen_US
dc.titleStudy of annealing and exchange bias effects in PtMn based magnetic tunnel junction systemen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1002/pssc.200405519en_US
dc.identifier.journalSECOND SEEHEIM CONFERENCE ON MAGNETISM, PROCEEDINGSen_US
dc.citation.spage3628en_US
dc.citation.epage3631en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000227060600088-
Appears in Collections:Conferences Paper


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