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DC FieldValueLanguage
dc.contributor.authorHUANG, WCen_US
dc.contributor.authorLEI, TFen_US
dc.contributor.authorLEE, CLen_US
dc.date.accessioned2014-12-08T15:03:15Z-
dc.date.available2014-12-08T15:03:15Z-
dc.date.issued1995-07-01en_US
dc.identifier.issn0021-8979en_US
dc.identifier.urihttp://dx.doi.org/10.1063/1.360673en_US
dc.identifier.urihttp://hdl.handle.net/11536/1817-
dc.language.isoen_USen_US
dc.titleA DOUBLE METAL STRUCTURE PT/AL/N-INP DIODEen_US
dc.typeArticleen_US
dc.identifier.doi10.1063/1.360673en_US
dc.identifier.journalJOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume78en_US
dc.citation.issue1en_US
dc.citation.spage291en_US
dc.citation.epage294en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:A1995RE58200042-
dc.citation.woscount14-
Appears in Collections:Articles


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