標題: | HIGH-BARRIER PT/AL/N-INP DIODE |
作者: | HUANG, WC LEI, TF LEE, CL 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | SCHOTTKY-BARRIER DIODES;INDIUM PHOSPHIDE |
公開日期: | 25-五月-1995 |
摘要: | A new Pt/Al/n-InP, contact diode, which has a good I-V characteristic is studied. It has a barrier height of 0.74eV, which increases to 0.99eV when it is treated with HF, an ideality factor of 1.18, and a reverse leakage current of 5.5 x 10(-8)A/cm(2) at -3V. This good performance is believed to be due to the combined effects of the formation of an interfacial oxide layer and fluorine passivation on the surface. |
URI: | http://dx.doi.org/10.1049/el:19950614 http://hdl.handle.net/11536/1915 |
ISSN: | 0013-5194 |
DOI: | 10.1049/el:19950614 |
期刊: | ELECTRONICS LETTERS |
Volume: | 31 |
Issue: | 11 |
起始頁: | 924 |
結束頁: | 925 |
顯示於類別: | 期刊論文 |