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  1. You are Here:National Chiao Tung University Institutional Repository
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標題: A DOUBLE METAL STRUCTURE PT/AL/N-INP DIODE
作者: HUANG, WC
LEI, TF
LEE, CL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jul-1995
URI: http://dx.doi.org/10.1063/1.360673
http://hdl.handle.net/11536/1817
ISSN: 0021-8979
DOI: 10.1063/1.360673
期刊: JOURNAL OF APPLIED PHYSICS
Volume: 78
Issue: 1
起始頁: 291
結束頁: 294
Appears in Collections:Articles


Related Contents
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  • CrossRef
  • Effects of bromine-methanol and hydrogen chloride pretreatments on Pt/Al/n-InP diodes / Huang, WC;Lei, TF;Lee, CL
  • 以白金為銅之擴散阻障層製作全面銅金屬化之磷化銦異質接面雙極電晶體及其特性量測 / 曾昭瑋;張翼
  • HIGH-BARRIER PT/AL/N-INP DIODE / HUANG, WC;LEI, TF;LEE, CL
  • A PSEUDOMORPHIC GAINP/INP MESFET WITH IMPROVED DEVICE PERFORMANCE / LIN, KC;HSIN, YM;CHANG, CY;CHANG, EY
  • Nanocontact disorder in InP nanowire devices for the enhancement of visible light and oxygen gas sensitivities / Lin, Yen-Fu;Chang, Chia-Hung;Hung, Tsu-Chang;Liu, Zhaoping;Fang, Jiye
  • 砷化鎵及磷化銦異質接面雙載子電晶體之銅金屬化製程研究 / 張尚文;張翼;E. Y. Chang
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