標題: | High thermal stability metal gate with tunable work function |
作者: | Huang, CF Tsui, BY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2004 |
摘要: | It has been reported that the work function of Ta-Pt alloys is tunable and Ta-Pt is a possible gate material for CMOS devices. In this work, we demonstrate that the Ta-Pt alloy is thermally stable up to 900degreesC. The impact of oxygen contamination and thermal stress on the stability of the MOS structure with the alloy gate is also discussed. It is concluded that the Ta-Pt alloy is a good candidate for gate electrode in the nanoscale CMOS regime and is compatible with the conventional self-aligned process. |
URI: | http://hdl.handle.net/11536/18186 |
ISBN: | 0-7803-8166-1 |
ISSN: | 2159-1660 |
期刊: | 2004 24TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, PROCEEDINGS, VOLS 1 AND 2 |
起始頁: | 451 |
結束頁: | 454 |
顯示於類別: | 會議論文 |