Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique

doi:10.1109/RELPHY.2004.1315428

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Gu, SH	en_US
dc.contributor.author	Wang, MT	en_US
dc.contributor.author	Chan, CT	en_US
dc.contributor.author	Zous, NK	en_US
dc.contributor.author	Yeh, CC	en_US
dc.contributor.author	Tsai, WJ	en_US
dc.contributor.author	Lu, TC	en_US
dc.contributor.author	Wang, TH	en_US
dc.contributor.author	Ku, J	en_US
dc.contributor.author	Lu, CY	en_US
dc.date.accessioned	2014-12-08T15:25:47Z	-
dc.date.available	2014-12-08T15:25:47Z	-
dc.date.issued	2004	en_US
dc.identifier.isbn	0-7803-8315-X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18211	-
dc.identifier.uri	http://dx.doi.org/10.1109/RELPHY.2004.1315428	en_US
dc.description.abstract	The lateral distribution of programmed charge in a hot electron program/hot hole erase nitride storage flash cell is investigated by using a charge pumping technique. Our study shows that the secondly programmed bit has a wider trapped charge distribution than the first programmed bit. In addition, we find prograrnmed charge spreads further into the channel with program/erase cycle number.	en_US
dc.language.iso	en_US	en_US
dc.title	Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/RELPHY.2004.1315428	en_US
dc.identifier.journal	2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS	en_US
dc.citation.spage	639	en_US
dc.citation.epage	640	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000222139900137	-
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