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dc.contributor.authorChan, CTen_US
dc.contributor.authorKuo, CHen_US
dc.contributor.authorTang, CJen_US
dc.contributor.authorChen, MCen_US
dc.contributor.authorWang, THen_US
dc.contributor.authorLu, SHen_US
dc.contributor.authorHu, HCen_US
dc.contributor.authorChen, TFen_US
dc.contributor.authorYang, CKen_US
dc.contributor.authorLee, MTen_US
dc.contributor.authorWu, DYen_US
dc.contributor.authorChen, JKen_US
dc.contributor.authorChien, SCen_US
dc.contributor.authorSun, SWen_US
dc.date.accessioned2014-12-08T15:25:49Z-
dc.date.available2014-12-08T15:25:49Z-
dc.date.issued2004en_US
dc.identifier.isbn0-7803-8454-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/18273-
dc.description.abstractAccelerated oxide breakdown progression in ultra-thin oxide (1.4nm) SOI pMOSFETs is observed, as compared to bulk devices. The accelerated progression is explained by the increase of hole stress current as a result of breakdown induced channel carrier heating in a floating-body configuration. Numerical simulation of hole tunneling current and hot carrier luminescence measurement are carried out to justify the proposed theory.en_US
dc.language.isoen_USen_US
dc.subjectSOI pMOSen_US
dc.subjectbreakdown progressionen_US
dc.subjectbody potentialen_US
dc.subjectcarrier temperatureen_US
dc.titleComparison of oxide breakdown progression in ultra-thin oxide SOI and bulk pMOSFETsen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITSen_US
dc.citation.spage49en_US
dc.citation.epage52en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000224428800014-
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