完整後設資料紀錄
DC 欄位語言
dc.contributor.authorWang, JCen_US
dc.contributor.authorChiang, KCen_US
dc.contributor.authorLei, TFen_US
dc.contributor.authorLee, CLen_US
dc.date.accessioned2014-12-08T15:25:50Z-
dc.date.available2014-12-08T15:25:50Z-
dc.date.issued2004en_US
dc.identifier.isbn0-7803-8454-7en_US
dc.identifier.urihttp://hdl.handle.net/11536/18274-
dc.description.abstractIn this paper, we have investigated the properties and carrier transportation of ultra-thin cerium dioxide films with rapid thermal annealing. Improved characteristics such as low leakage current, high breakdown voltage and large time-dependent-dielectric-breakdown (TDDB) are obtained owing to the more stoichiometric of the CeO2 films after high temperature annealing. Moreover, temperature dependence of gate leakage current under substrate injection is studied, and the carrier conduction mechanisms, including the Frenkel-Poole (F-P) conduction and the Fowler-Nordheim (F-N) tunneling are also proposed, from which we have deduced the energy band diagram of Al/CeO2/n-Si structure for the first time.en_US
dc.language.isoen_USen_US
dc.titleCharacteristics improvement and carrier transportation of CeO2 gate dielectrics with rapid thermal annealingen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITSen_US
dc.citation.spage161en_US
dc.citation.epage164en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000224428800039-
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