標題: Correlation between transmission-line-pulsing I-V curve and human-body-model ESD level on low temperature poly-Si TFT devices
作者: Ker, MD
Hou, CL
Chang, CY
Chu, FT
電機學院
College of Electrical and Computer Engineering
公開日期: 2004
摘要: The relations between human-body-model (HBM) electrostatic discharge (ESD) waveform and transmission line pulsing (TLP) I-V curve on low temperature poly-Si (LTPS) thin film transistor (TFT) have been investigated in this paper. By using ESD zapper and TLP system, the ESD waveforms and TLP I-V curves on the LPTS TFT devices under different device dimensions have been measured. From the experimental results, the turn-on resistances of TFT devices during HBM zapping and TLP stress are almost the same. Such experimental results have shown a good correction between HBM ESD level and TLP measurement on LTPS TFT devices.
URI: http://hdl.handle.net/11536/18277
ISBN: 0-7803-8454-7
期刊: IPFA 2004: PROCEEDINGS OF THE 11TH INTERNATIONAL SYMPOSIUM ON THE PHYSICAL & FAILURE ANALYSIS OF INTEGRATED CIRCUITS
起始頁: 209
結束頁: 212
顯示於類別:會議論文