ESD robustness of thin-film devices with different layout structures in LTPS technology

標題:	ESD robustness of thin-film devices with different layout structures in LTPS technology
作者:	Deng, Chih-Kang Ker, Ming-Dou 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	1-十二月-2006
摘要:	The electrostatic discharge (ESD) robustness of different thin-film devices, including three diodes and two thin-film transistors (TFTs) in low-temperature polysilicon (LTPS) technology, is investigated. By using the transmission line pulse generator (TLPG), the high-current characteristics and the secondary breakdown current (It2) of these thin-film devices are observed. The experimental results with different parameters and layout structures of these LTPS thin-film devices have been evaluated for optimizing ESD protection design for liquid crystal display (LCD) panel. (c) 2006 Elsevier Ltd. All rights reserved.
URI:	http://dx.doi.org/10.1016/j.microrel.2006.01.008 http://hdl.handle.net/11536/11504
ISSN:	0026-2714
DOI:	10.1016/j.microrel.2006.01.008
期刊:	MICROELECTRONICS RELIABILITY
Volume:	46
Issue:	12
起始頁:	2067
結束頁:	2073
顯示於類別：	期刊論文

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