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dc.contributor.authorChin, Aen_US
dc.contributor.authorYu, DSen_US
dc.contributor.authorWu, CHen_US
dc.contributor.authorHuang, CHen_US
dc.contributor.authorChen, WJen_US
dc.date.accessioned2014-12-08T15:25:52Z-
dc.date.available2014-12-08T15:25:52Z-
dc.date.issued2004en_US
dc.identifier.isbn1-56677-405-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/18300-
dc.description.abstractThe much degraded mobility, high-kappa dielectric crystallization, and EOT reduction after processing are the primary limitations of high-kappa gate dielectric MOSFETs. We have fabricated the high-kappa Al2O3 MOSFET on Geon-Insulator to enhance the hole mobility. The measured hole mobility with 1.7 nm EOT is 73 cm(2)/Vs at E-eff of 1 MV/cm, which is 2.5 times and 1.3 times higher than and Al2O3/Si control devices and SiO2/Si universal mobility, respectively. In additional to good dielectric reliability, the low temperature process (less than or equal to500degreesC) can also avoid high-kappa dielectric crystallization and EOT reduction by O-2 or moisture penetration through high-kappa dielectric.en_US
dc.language.isoen_USen_US
dc.titleHigh hole mobility of Al2O3 mosfets on dislocation free Ge-on-insulator wafersen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS IIen_US
dc.citation.volume2003en_US
dc.citation.issue22en_US
dc.citation.spage363en_US
dc.citation.epage371en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000189482600033-
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