完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chin, A | en_US |
dc.contributor.author | Yu, DS | en_US |
dc.contributor.author | Wu, CH | en_US |
dc.contributor.author | Huang, CH | en_US |
dc.contributor.author | Chen, WJ | en_US |
dc.date.accessioned | 2014-12-08T15:25:52Z | - |
dc.date.available | 2014-12-08T15:25:52Z | - |
dc.date.issued | 2004 | en_US |
dc.identifier.isbn | 1-56677-405-5 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/18300 | - |
dc.description.abstract | The much degraded mobility, high-kappa dielectric crystallization, and EOT reduction after processing are the primary limitations of high-kappa gate dielectric MOSFETs. We have fabricated the high-kappa Al2O3 MOSFET on Geon-Insulator to enhance the hole mobility. The measured hole mobility with 1.7 nm EOT is 73 cm(2)/Vs at E-eff of 1 MV/cm, which is 2.5 times and 1.3 times higher than and Al2O3/Si control devices and SiO2/Si universal mobility, respectively. In additional to good dielectric reliability, the low temperature process (less than or equal to500degreesC) can also avoid high-kappa dielectric crystallization and EOT reduction by O-2 or moisture penetration through high-kappa dielectric. | en_US |
dc.language.iso | en_US | en_US |
dc.title | High hole mobility of Al2O3 mosfets on dislocation free Ge-on-insulator wafers | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS II | en_US |
dc.citation.volume | 2003 | en_US |
dc.citation.issue | 22 | en_US |
dc.citation.spage | 363 | en_US |
dc.citation.epage | 371 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000189482600033 | - |
顯示於類別: | 會議論文 |